| PART |
Description |
Maker |
| 29F200C-55 29F200C-90 29F200C-70 |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 200万位[256Kx8/128Kx16]的CMOS闪存
|
Macronix International Co., Ltd.
|
| EDI88257CA EDI88257CAXCC EDI88257CAXCM EDI88257LPA |
256Kx8 Monolithic SRAM
|
WEDC[White Electronic Designs Corporation]
|
| LE25U20AMB-AH |
2M-bit (256Kx8)Serial Flash Memory
|
ON Semiconductor
|
| N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
|
ON Semiconductor
|
| WSF128K32-29H2C WSF128K32-27H2CA WSF128K32-27H2M W |
128KX32 SRAM/FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WSF512K32-XXX WSF512K32-29H2C WSF512K32-29H2CA WSF |
512KX32 SRAM / FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 D |
2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16K Nonovolatile SRAM
From old datasheet system
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
http://
|
| K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| ACT-SF2816N-39F18C ACT-SF2816N-39F18I ACT-SF2816N- |
ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module
|
http://
|
| ACT-SF41632N-39P5Q ACT-SF41632N-39P5I ACT-SF41632N |
ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module
|
Aeroflex Circuit Techno...
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